Semiconductor Device and Method of Making Embedded Wafer Level Chip Scale Packages

ABSTRACT

A semiconductor device includes a carrier and a plurality of semiconductor die disposed over the carrier. An encapsulant is deposited over the semiconductor die. A composite layer is formed over the encapsulant to form a panel. The carrier is removed. A conductive layer is formed over the panel. An insulating layer is formed over the conductive layer. The carrier includes a glass layer, a second composite layer formed over the glass layer, and an interface layer formed over the glass layer. The composite layer and encapsulant are selected to tune a coefficient of thermal expansion of the panel. The panel includes panel blocks comprising an opening separating the panel blocks. The encapsulant or insulating material is deposited in the opening. A plurality of support members are disposed around the panel blocks. An interconnect structure is formed over the conductive layer.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor device and method of makingembedded wafer level chip scale packages (eWLCSP).

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), small signaltransistor, resistor, capacitor, inductor, and power metal oxidesemiconductor field effect transistor (MOSFET). Integrated semiconductordevices typically contain hundreds to millions of electrical components.Examples of integrated semiconductor devices include microcontrollers,microprocessors, charged-coupled devices (CCDs), solar cells, anddigital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such as signalprocessing, high-speed calculations, transmitting and receivingelectromagnetic signals, controlling electronic devices, transformingsunlight to electricity, and creating visual projections for televisiondisplays. Semiconductor devices are found in the fields ofentertainment, communications, power conversion, networks, computers,and consumer products. Semiconductor devices are also found in militaryapplications, aviation, automotive, industrial controllers, and officeequipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The structure of semiconductor material allows its electricalconductivity to be manipulated by the application of an electric fieldor base current or through the process of doping. Doping introducesimpurities into the semiconductor material to manipulate and control theconductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including bipolar and field effecttransistors, control the flow of electrical current. By varying levelsof doping and application of an electric field or base current, thetransistor either promotes or restricts the flow of electrical current.Passive structures, including resistors, capacitors, and inductors,create a relationship between voltage and current necessary to perform avariety of electrical functions. The passive and active structures areelectrically connected to form circuits, which enable the semiconductordevice to perform high-speed operations and other useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each semiconductor die is typicallyidentical and contains circuits formed by electrically connecting activeand passive components. Back-end manufacturing involves singulatingindividual semiconductor die from the finished wafer and packaging thedie to provide structural support and environmental isolation. The term“semiconductor die” as used herein refers to both the singular andplural form of the words, and accordingly, can refer to both a singlesemiconductor device and multiple semiconductor devices.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and are produced more efficiently. In addition,smaller semiconductor devices have a smaller footprint, which isdesirable for smaller end products. A smaller semiconductor die size isachieved by improvements in the front-end process resulting insemiconductor die with smaller, higher density active and passivecomponents. Back-end processes may result in semiconductor devicepackages with a smaller footprint by improvements in electricalinterconnection and packaging materials.

A conventional semiconductor wafer typically contains a plurality ofsemiconductor die separated by a saw street. Active and passive circuitsare formed in a surface of each semiconductor die. An interconnectstructure is formed over the surface of the semiconductor die. Thesemiconductor wafer is singulated into individual semiconductor die foruse in a variety of electronic products. An important aspect ofsemiconductor manufacturing is high yield and corresponding low cost.Larger wafer sizes can lead to higher yield if the process is carriedout without breaking a wafer. However, when processing wafer sizes inexcess of 300 millimeters (mm) warpage and breakage during processingsteps become more common and lead to lower yield.

SUMMARY OF THE INVENTION

A need exists for a simple and cost-effective semiconductor package tominimize warpage and breaking during processing steps and maintain highyield. Accordingly, in one embodiment, the present invention is a methodof making a semiconductor device comprising the steps of providing acarrier, disposing a plurality of semiconductor die over the carrier,depositing an encapsulant over the semiconductor die, disposing acomposite layer over the encapsulant to form a panel, removing thecarrier, and forming a conductive layer over the panel.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a plurality ofsemiconductor die, depositing an encapsulant over the semiconductor dieincluding a recess between the semiconductor die, forming a supportlayer over the encapsulant and recess to form a panel, and forming aconductive layer over the panel.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a plurality ofsemiconductor die, depositing an encapsulant over the semiconductor die,forming a support layer over the encapsulant to form a panel, andforming a conductive layer over the panel.

In another embodiment, the present invention is a semiconductor devicecomprising a plurality of semiconductor die and an encapsulant depositedover the semiconductor die including a recess between the semiconductordie. A support layer is deposited over the encapsulant.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a printed circuit board (PCB) with different types ofpackages mounted to the surface of the PCB;

FIGS. 2 a-2 c illustrate further detail of the representativesemiconductor packages mounted to the PCB;

FIGS. 3 a-3 d illustrate a semiconductor wafer with a plurality ofsemiconductor die separated by a saw street;

FIGS. 4 a-4 d illustrate carriers for processing a semiconductor deviceincluding layers of glass, composite material, adhesive tape, and metalfoil;

FIGS. 5 a-5 k illustrate a process of forming a semiconductor deviceusing panel blocks including semiconductor die and a composite supportlayer;

FIGS. 6 a-6 k illustrate a process of forming a semiconductor deviceusing panel blocks including semiconductor die and a composite supportlayer partially between panel blocks;

FIGS. 7 a-7 d illustrate a process of forming a semiconductor deviceusing panel blocks and a glass and composite carrier;

FIGS. 8 a-8 g illustrate a process of forming a semiconductor deviceusing panel blocks with semiconductor die and support bars around thepanel blocks;

FIGS. 9 a-9 g illustrate a process of forming a semiconductor deviceusing a prelaminated carrier including glass and composite material;

FIGS. 10 a-10 h illustrate a process of forming a semiconductor deviceusing panel blocks including semiconductor die and a molded supportlayer;

FIGS. 11 a-11 g illustrate a process of forming a semiconductor deviceusing a resin coated copper film; and

FIGS. 12 a-12 i illustrate a process of forming a semiconductor devicewith a glass support substrate embedded in encapsulant.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, those skilled in the art will appreciate that thedescription is intended to cover alternatives, modifications, andequivalents as may be included within the spirit and scope of theinvention as defined by the appended claims and the claims' equivalentsas supported by the following disclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components, which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors and diodes, have the abilityto control the flow of electrical current. Passive electricalcomponents, such as capacitors, inductors, and resistors, create arelationship between voltage and current necessary to perform electricalcircuit functions.

Passive and active components are formed over the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devicesby dynamically changing the semiconductor material conductivity inresponse to an electric field or base current. Transistors containregions of varying types and degrees of doping arranged as necessary toenable the transistor to promote or restrict the flow of electricalcurrent upon the application of the electric field or base current.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers are formed by a variety ofdeposition techniques determined in part by the type of material beingdeposited. For example, thin film deposition can involve chemical vapordeposition (CVD), physical vapor deposition (PVD), electrolytic plating,and electroless plating processes. Each layer is generally patterned toform portions of active components, passive components, or electricalconnections between components.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual semiconductor die and then packaging thesemiconductor die for structural support and environmental isolation. Tosingulate the semiconductor die, the wafer is scored and broken alongnon-functional regions of the wafer called saw streets or scribes. Thewafer is singulated using a laser-cutting tool or saw blade. Aftersingulation, the individual semiconductor die are mounted to a packagesubstrate that includes pins or contact pads for interconnection withother system components. Contact pads formed over the semiconductor dieare then connected to contact pads within the package. The electricalconnections are made with solder bumps, stud bumps, conductive paste, orwirebonds. An encapsulant or other molding material is deposited overthe package to provide physical support and electrical isolation. Thefinished package is then inserted into an electrical system and thefunctionality of the semiconductor device is made available to the othersystem components.

FIG. 1 illustrates electronic device 50 having a chip carrier substrateor PCB 52 with a plurality of semiconductor packages mounted on asurface of PCB 52. Electronic device 50 can have one type ofsemiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 1 for purposes of illustration.

Electronic device 50 is a stand-alone system that uses the semiconductorpackages to perform one or more electrical functions. Alternatively,electronic device 50 is a subcomponent of a larger system. For example,electronic device 50 is part of a cellular phone, personal digitalassistant (PDA), digital video camera (DVC), or other electroniccommunication device. Alternatively, electronic device 50 is a graphicscard, network interface card, or other signal-processing card that canbe inserted into a computer. The semiconductor package can includemicroprocessors, memories, application specific integrated circuits(ASIC), logic circuits, analog circuits, radio frequency (RF) circuits,discrete devices, or other semiconductor die or electrical components.Miniaturization and weight reduction are essential for the products tobe accepted by the market. The distance between semiconductor devicesmay be decreased to achieve higher density.

In FIG. 1, PCB 52 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 54 are formed over a surface or withinlayers of PCB 52 using evaporation, electrolytic plating, electrolessplating, screen-printing, or other suitable metal deposition process.Signal traces 54 provide for electrical communication between each ofthe semiconductor packages, mounted components, and other externalsystem components. Traces 54 also provide power and ground connectionsto each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is a technique for mechanically and electricallyattaching the semiconductor die to an intermediate carrier. Second levelpackaging involves mechanically and electrically attaching theintermediate carrier to the PCB. In other embodiments, a semiconductordevice may only have the first level packaging where the die ismechanically and electrically mounted directly to the PCB.

For the purpose of illustration, several types of first level packaging,including bond wire package 56 and flipchip 58, are shown on PCB 52.Additionally, several types of second level packaging, including ballgrid array (BGA) 60, bump chip carrier (BCC) 62, dual in-line package(DIP) 64, land grid array (LGA) 66, multi-chip module (MCM) 68, quadflat non-leaded package (QFN) 70, and quad flat package 72, are shownmounted on PCB 52. Depending upon the system requirements, anycombination of semiconductor packages, configured with any combinationof first and second level packaging styles, as well as other electroniccomponents, are connected to PCB 52. In some embodiments, electronicdevice 50 includes a single attached semiconductor package, while otherembodiments call for multiple interconnected packages. By combining oneor more semiconductor packages over a single substrate, manufacturerscan incorporate pre-made components into electronic devices and systems.Because the semiconductor packages include sophisticated functionality,electronic devices are manufactured using less expensive components anda streamlined manufacturing process. The resulting devices are lesslikely to fail and less expensive to manufacture resulting in a lowercost for consumers.

FIGS. 2 a-2 c show exemplary semiconductor packages. FIG. 2 aillustrates further detail of DIP 64 mounted on PCB 52. Semiconductordie 74 includes an active region containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and are electricallyinterconnected according to the electrical design of the die. Forexample, the circuit can include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements formedwithin the active region of semiconductor die 74. Contact pads 76 areone or more layers of conductive material, such as aluminum (Al), copper(Cu), tin (Sn), nickel (Ni), gold (Au), or silver (Ag), and areelectrically connected to the circuit elements formed withinsemiconductor die 74. During assembly of DIP 64, semiconductor die 74 ismounted to an intermediate carrier 78 using a gold-silicon eutecticlayer or adhesive material such as thermal epoxy or epoxy resin. Thepackage body includes an insulating packaging material such as polymeror ceramic. Conductor leads 80 and bond wires 82 provide electricalinterconnect between semiconductor die 74 and PCB 52. Encapsulant 84 isdeposited over the package for environmental protection by preventingmoisture and particles from entering the package and contaminatingsemiconductor die 74 or bond wires 82.

FIG. 2 b illustrates further detail of BCC 62 mounted on PCB 52.Semiconductor die 88 is mounted over carrier 90 using an underfill orepoxy-resin adhesive material 92. Bond wires 94 provide first levelpackaging interconnect between contact pads 96 and 98. Molding compoundor encapsulant 100 is deposited over semiconductor die 88 and bond wires94 to provide physical support and electrical isolation for the device.Contact pads 102 are formed over a surface of PCB 52 using a suitablemetal deposition process such as electrolytic plating or electrolessplating to prevent oxidation. Contact pads 102 are electricallyconnected to one or more conductive signal traces 54 in PCB 52. Bumps104 are formed between contact pads 98 of BCC 62 and contact pads 102 ofPCB 52.

In FIG. 2 c, semiconductor die 58 is mounted face down to intermediatecarrier 106 with a flipchip style first level packaging. Active region108 of semiconductor die 58 contains analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed according to the electrical design of the die.For example, the circuit can include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements withinactive region 108. Semiconductor die 58 is electrically and mechanicallyconnected to carrier 106 through bumps 110.

BGA 60 is electrically and mechanically connected to PCB 52 with a BGAstyle second level packaging using bumps 112. Semiconductor die 58 iselectrically connected to conductive signal traces 54 in PCB 52 throughbumps 110, signal lines 114, and bumps 112. A molding compound orencapsulant 116 is deposited over semiconductor die 58 and carrier 106to provide physical support and electrical isolation for the device. Theflipchip semiconductor device provides a short electrical conductionpath from the active devices on semiconductor die 58 to conductiontracks on PCB 52 in order to reduce signal propagation distance, lowercapacitance, and improve overall circuit performance. In anotherembodiment, semiconductor die 58 is mechanically and electricallyconnected directly to PCB 52 using flipchip style first level packagingwithout intermediate carrier 106.

FIG. 3 a shows a semiconductor wafer 120 with a base substrate material122, such as silicon, germanium, gallium arsenide, indium phosphide, orsilicon carbide, for structural support. A plurality of semiconductordie or components 124 is formed on wafer 120 separated by a non-active,inter-die wafer area or saw street 126 as described above. Saw street126 provides cutting areas to singulate semiconductor wafer 120 intoindividual semiconductor die 124. In one embodiment, semiconductor wafer120 has a width or diameter of 200-300 mm. In another embodiment,semiconductor wafer 120 has a width or diameter of 100-450 mm.

FIG. 3 b shows a cross-sectional view of a portion of semiconductorwafer 120. Each semiconductor die 124 has a back or non-active surface128 and active surface 130 containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and electrically interconnectedaccording to the electrical design and function of the die. For example,the circuit may include one or more transistors, diodes, and othercircuit elements formed within active surface 130 to implement analogcircuits or digital circuits, such as digital signal processor (DSP),ASIC, memory, or other signal processing circuit. Semiconductor die 124may also contain integrated passive devices (IPDs), such as inductors,capacitors, and resistors, for RF signal processing. In one embodiment,semiconductor die 124 is a flipchip type semiconductor die.

An electrically conductive layer 132 is formed over active surface 130using PVD, CVD, electrolytic plating, electroless plating process, orother suitable metal deposition process. Conductive layer 132 is one ormore layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable electricallyconductive material. Conductive layer 132 operates as contact padselectrically connected to the circuits on active surface 130. Conductivelayer 132 is formed as contact pads disposed side-by-side a firstdistance from the edge of semiconductor die 124, as shown in FIG. 3 b.Alternatively, conductive layer 132 is formed as contact pads that areoffset in multiple rows such that a first row of contact pads isdisposed a first distance from the edge of the die, and a second row ofcontact pads alternating with the first row is disposed a seconddistance from the edge of the die.

In FIG. 3 c, semiconductor wafer 120 undergoes electrical testing andinspection as part of a quality control process. Manual visualinspection and automated optical systems are used to perform inspectionson semiconductor wafer 120. Software is used in the automated opticalanalysis of semiconductor wafer 120. Visual inspection methods mayemploy equipment such as a scanning electron microscope, high-intensityor ultra-violet light, or metallurgical microscope. Semiconductor wafer120 is inspected for structural characteristics including warpage,thickness variation, surface particulates, irregularities, cracks,delamination, and discoloration.

The active and passive components within semiconductor die 124 undergotesting at the wafer level for electrical performance and circuitfunction. Each semiconductor die 124 is tested for functionality andelectrical parameters using a probe or other testing device. Test probehead 140 includes a plurality of probes 142. Probes are used to makeelectrical contact with nodes or contact pads 132 on each semiconductordie 124 and provides electrical stimuli to the contact pads.Semiconductor die 124 responds to the electrical stimuli, which ismeasured by a computer test system 144 and compared to an expectedresponse to test functionality of the semiconductor die. The electricaltests may include circuit functionality, lead integrity, resistivity,continuity, reliability, junction depth, electro-static discharge (ESD),RF performance, drive current, threshold current, leakage current, andoperational parameters specific to the component type. The inspectionand electrical testing of semiconductor wafer 120 enables semiconductordie 124 that pass to be designated as known good die (KGD) for use in asemiconductor package.

In FIG. 3 d, semiconductor wafer 120 is singulated through saw street126 using a saw blade or laser-cutting tool 138 into individualsemiconductor die 124. The individual semiconductor die 124 is inspectedand electrically tested for identification of KGD post singulation.

FIGS. 4 a-4 d illustrate composite multilayer panels for use as carriersthat include combinations of glass, fiber enhanced protection layers,and foil. FIG. 4 a shows a cross-sectional view of a portion of acarrier or temporary substrate 160 containing base material 162 such aspolycrystal silicon, low CTE polymer matrix composite, glass, or othersuitable low-cost, rigid material for structural support. An interfacelayer or double-sided tape 164 is formed over carrier 160 as a temporaryadhesive bonding film, etch-stop layer, or thermal release layer.Carrier 160 also includes fiber or filler enhanced support layer orcomposite layer 166 to control warpage and limit breakage.

Composite layer 166 includes one or more laminated layers ofpre-impregnated (prepreg) with bismaleimide-triazine (BT), FR-4, FR-1,CEM-1, or CEM-3, or other material having similar insulating andstructural properties. Composite layer 166 further includes an epoxyresin or polymer with a reinforcement fiber or fabric, such as phenoliccotton paper, epoxy, resin, woven glass, matte glass, polyester, andother reinforcement fibers or fabrics. In one embodiment, compositelayer 166 is a prepreg sheet, roll, or tape including a polymer matrixenhanced with woven glass fiber and deposited using vacuum or pressurelamination with or without heat. The material selected for compositelayer 166 enhances the overall strength of carrier 160 and reduceswarpage of carrier 160 and the reconstituted wafer or panel formed overcarrier 160. In one embodiment, carrier 160 includes glass as basematerial 162 with fiber or filler enhanced composite layer 166 bonded toa surface of the glass opposite tape 164. In one embodiment, compositemultilayer panel or carrier 160 includes a glass base material augmentedby a fiber enhanced protection layer such as prepreg, with or withoutcopper foil, to protect the carrier from breakage.

FIG. 4 b shows a cross-sectional view of a portion of a carrier ortemporary substrate 170 containing base material 172 such as polycrystalsilicon, polymer, glass, or other suitable low-cost, rigid material forstructural support. Metal film 174 is bonded to base material 172. Aninterface layer or double-sided tape 176 is formed over base material172 and metal film 174 as a temporary adhesive bonding film, etch-stoplayer, or thermal release layer. Carrier 170 also includes fiber orfiller enhanced composite layer 178 for support.

Composite layer 178 includes one or more laminated layers of prepregwith BT, FR-4, FR-1, CEM-1, or CEM-3, or other material having similarinsulating and structural properties. Composite layer 178 furtherincludes an epoxy resin or polymer with a reinforcement fiber or fabric,such as phenolic cotton paper, epoxy, resin, woven glass, matte glass,polyester, and other reinforcement fibers or fabrics. In one embodiment,composite layer 178 is a prepreg sheet, roll, or tape including apolymer matrix enhanced with woven glass fiber and deposited usingvacuum or pressure lamination with or without heat. The materialselected for composite layer 178 enhances the overall strength ofcarrier 170 and reduces warpage of carrier 170 and the reconstitutedwafer or panel formed over carrier 170. In one embodiment, carrier 170includes glass as base material 172 with fiber or filler enhancedcomposite layer 178 bonded to a surface of the glass opposite metal film174 and tape 176. In one embodiment, composite multilayer panel orcarrier 170 includes a glass base material augmented by a fiber enhancedprotection layer such as prepreg, with or without copper foil, toprotect the carrier from breakage.

FIG. 4 c shows a cross-sectional view of a portion of a carrier ortemporary substrate 180 containing base material 182 such as polycrystalsilicon, polymer, glass, or other suitable low-cost, rigid material forstructural support. A fiber or filler enhanced composite layer 184 isformed over base material 182 for support. Composite layer 184 includesone or more laminated layers of prepreg with BT, FR-4, FR-1, CEM-1, orCEM-3, or other material having similar insulating and structuralproperties. Composite layer 184 further includes an epoxy resin orpolymer with a reinforcement fiber or fabric, such as phenolic cottonpaper, epoxy, resin, woven glass, matte glass, polyester, and otherreinforcement fibers or fabrics. In one embodiment, composite layer 184is a prepreg sheet, roll, or tape including a polymer matrix enhancedwith woven glass fiber and deposited using vacuum or pressure laminationwith or without heat. The material selected for composite layer 184enhances the overall strength of carrier 180 and reduces warpage ofcarrier 180 and the reconstituted wafer or panel formed over carrier180.

A second layer of base material 186 is formed over composite layer 184so that composite layer 184 is between base material 182 and basematerial 186. Base material 186 contains material such as polycrystalsilicon, polymer, glass, or other suitable low-cost, rigid material forstructural support. An interface layer or double-sided tape 188 isformed over base material 186 as a temporary adhesive bonding film,etch-stop layer, or thermal release layer. In one embodiment, carrier180 includes glass as base material 182 and 186 with fiber or fillerenhanced composite layer 184 bonded to surfaces of glass base material186 and 182 to provide support. In one embodiment, composite multilayerpanel or carrier 180 includes a glass base material augmented by a fiberenhanced protection layer such as prepreg, with or without copper foil,to protect the carrier from breakage.

FIG. 4 d shows a cross-sectional view of a portion of a carrier ortemporary substrate 190 containing base material 192 such as polycrystalsilicon, polymer, glass, or other suitable low-cost, rigid material forstructural support. Metal film 194 is bonded to a surface of basematerial 192. The bonding may or may not be visible. An interface layeror double-sided tape 196 is formed over base material 192 and metal film194 as a temporary adhesive bonding film, etch-stop layer, or thermalrelease layer. Metal film 198 is bonded to a surface of base material192 opposite metal film 194. In one embodiment, carrier 190 includesglass base material 192 with metal film 194 and tape 196 bonded over afirst surface of glass base material 192 and metal film 198 bonded to asecond surface opposite the first surface. The bonding may or may not bevisible. In one embodiment, composite multilayer panel or carrier 190includes a glass base material augmented by a fiber enhanced protectionlayer such as prepreg, with or without copper foil, to protect thecarrier from breakage.

FIGS. 5 a-5 k show a process of forming a semiconductor device using acarrier and a dual-layer support structure with enhanced warpagecontrol. In FIG. 5 a, semiconductor die 124 from FIG. 3 d are mounted tocarrier 200. Carrier 200 is one of the carriers depicted in FIGS. 4 a-4d or other variations with enhanced warpage control. Carrier 200 isdepicted with base material 202 and metal film 204 deposited over basematerial 202. Interface layer or tape 206 is bonded to metal film 204.Composite layer 208 is bonded to the back surface of base material 202to provide support and improve warpage characteristics. Semiconductordie 124 are mounted to carrier 200 and interface layer 206 using, forexample, a pick and place operation with active surface 130 orientedtoward the carrier.

In FIG. 5 b, chase mold 210 is disposed over semiconductor die 124 andcarrier 200 to form chambers over semiconductor die 124. FIG. 5 c showsan encapsulant or molding compound 212 deposited over and aroundsemiconductor die 124 in chase mold 210 after the full closure of chasemold on interface layer 206. Encapsulant 212 is deposited oversemiconductor die 124 using nozzle dispense or paste printing followedby compressive molding or vacuum molding. In particular, encapsulant 212covers the four side surfaces and back surface 128 of semiconductor die124 after molding. Encapsulant 212 is polymer composite material, suchas epoxy resin with filler, epoxy acrylate with filler, or polymer withproper filler. Encapsulant 212 is non-conductive and environmentallyprotects the semiconductor die from external elements and contaminants.Encapsulant 212 also protects semiconductor die 124 from degradation dueto exposure to light. In one embodiment, the thickness of encapsulant212 over the back surface of semiconductor die 124 is 0.5 to 4 times themaximum filler cut of the encapsulant. The filler and coefficient ofthermal expansion (CTE) of encapsulant 212 are selected to aid with gapfilling, warpage control, adhesion to semiconductor die 124, adhesion tosubsequent build up layers, and reliability.

In FIG. 5 d, a support layer or composite layer 214 is formedconformally over encapsulant 212 to provide mechanical support andreduce warpage. Support layer 214 includes one or more laminated layersof prepreg with BT, FR-4, FR-1, CEM-1, or CEM-3, or other materialhaving similar insulating and structural properties. Support layer 214further includes an epoxy resin or polymer with a reinforcement fiber orfabric, such as phenolic cotton paper, epoxy, resin, woven glass, matteglass, polyester, and other reinforcement fibers or fabrics. In analternative embodiment, support layer 214 contains a molding compound,polymer dielectric with or without fillers, one or more layers of SiO2,Si3N4, SiON, Ta2O5, Al2O3, or other material having similar insulatingand structural properties. Support layer 214 is deposited using vacuumor pressure lamination with or without heat, PVD, CVD, screen printing,spin coating, spray coating, injection coating, sintering, thermaloxidation, or other suitable process. In one embodiment, support layer214 is a prepreg sheet, roll, or tape including a polymer matrixenhanced with woven glass fiber and deposited using vacuum or pressurelamination with or without heat. The material selected for support layer214 enhances the overall strength of the semiconductor package andimproves package warpage. The material and thickness for support layer214 are chosen to tune or select the CTE of panel 215 with support layer214 including a CTE less than encapsulant 212. In one embodiment,support layer 214 has a CTE less than 10 parts per million per degreeCelsius (ppm) and is less than 100 μm thick. An optional plasma orsolvent cleaning step is carried out on encapsulant 212 prior toformation of support layer 214 over encapsulant 212.

In FIG. 5 e, carrier 200 including base material 202, interface layer204, and composite layer 206 are removed from panel 215 by chemicaletching, mechanical peeling, chemical mechanical planarization (CMP),mechanical grinding, thermal bake, UV light, laser scanning, or wetstripping. Debonded panel 215 has a tuned CTE by including selectedencapsulant 212, support layer 214, and thickness of die 124. Panel 215with a properly tuned CTE has robust mechanical support to undergofurther processing steps without a carrier.

FIG. 5 f shows a cross section of panel 215 through encapsulant 212 andsupport layer 214. Panel 215 includes panel blocks 216. Each panel block216 includes one or more semiconductor die or component 124. Panelblocks 216 can also include one or more packages within each block 216.Panel blocks 216 are formed with a gap between each panel block. InFIGS. 5 e and 5 f, the gap is completely filled with support layer 214so that support layer 214 physically isolates encapsulant 212 ofadjacent panels.

In FIG. 5 g, an electrically conductive layer or redistribution layer(RDL) 220 is formed over the active surface of semiconductor die 124,encapsulant 212, and support layer 214 using a patterning and metaldeposition process such as sputtering, electrolytic plating, orelectroless plating. Conductive layer 220 is one or more layers of Al,Ti, TiW, Cu, Sn, Ni, Au, Ag, or other suitable electrically conductivematerial. One portion of conductive layer 220 is electrically connectedto contact pads 132 of semiconductor die 124. Portions of conductivelayer 220 are electrically common or electrically isolated depending onthe design and function of semiconductor die 124. RDL 220 is formed oversemiconductor die 124 in a fan-out configuration or a fan-inconfiguration.

An insulating or passivation layer 222 is formed over the active surfaceof semiconductor die 124, encapsulant 212, support layer 214, andconductive layer 220 using PVD, CVD, printing, slit coating, spincoating, spray coating, injection coating, lamination, sintering, orthermal oxidation. The support layer 222 contains one or more layers ofSiO2, Si3N4, SiON, Ta2O5, Al2O3, polymer dielectric resist with orwithout fillers or fibers, or other material having similar structuraland insulating properties. In FIG. 5 h, opening 224 is formed byremoving a portion of support layer 222 using an exposure or developmentprocess, laser direct ablation (LDA), etching, or other suitable processto expose conductive layer 220.

In FIG. 5 i, an electrically conductive bump material is deposited overthe build-up interconnect structure and electrically connected to theexposed portion of conductive layer 220 using an evaporation,electrolytic plating, electroless plating, ball drop, or screen printingprocess. The bump material is Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder,and combinations thereof, with an optional flux solution. For example,the bump material is eutectic Sn/Pb, high-lead solder, or lead-freesolder. The bump material is bonded to conductive layer 220 using asuitable attachment or bonding process. In one embodiment, the bumpmaterial is reflowed by heating the material above its melting point toform spherical balls or bumps 226. In some applications, bumps 226 arereflowed a second time to improve electrical contact to conductive layer220. An under bump metallization (UBM) is formed under bumps 226. Bumps226 can also be compression bonded to conductive layer 220. Bumps 226represent one type of interconnect structure that can be formed overconductive layer 220. The interconnect structure can also use stud bump,micro bump, or other electrical interconnect.

In FIG. 5 j, a backside surface of encapsulant 212 undergoes an optionalgrinding operation with grinder 230 to planarize and reduce a thicknessof support layer 214, encapsulant 212, and semiconductor die 124. Thegrinding operation removes a portion of encapsulant 212 and supportlayer 214. In one embodiment, encapsulant material is removed down toback surface 128 of semiconductor die 124. A chemical etch can also beused to planarize and remove a portion of encapsulant 212 andsemiconductor die 124. A chemical etch, CMP, or plasma dry etch can alsobe used to remove back grinding damage and residue stress onsemiconductor die 124 and encapsulant 212 to enhance the packagestrength. In one embodiment, encapsulant 212 and support layer 214remain over semiconductor die 124 after back grinding.

After back grinding, reconstituted wafer or panel 215 is singulated asshown in FIG. 5 k using a saw blade or laser cutting tool 232 to formindividual semiconductor packages or semiconductor devices 234.Semiconductor packages 232 are embedded wafer level ball grid array(eWLB) packages or eWLCSP packages. Packages 234 can include fan-out orfan-in interconnect structures. By forming semiconductor packages 234with panel 215 and panel blocks 216 the warpage characteristics of panel215 during processing are improved. Panel 215 with wafer shape reducesbreakage and supports semiconductor devices 234 during formation ofinterconnect structures by using a dual-layer support structure.

FIGS. 6 a-6 k show a process of forming a semiconductor device using acarrier and a dual-layer support structure with enhanced warpagecontrol. In FIG. 6 a, semiconductor die 124 from FIG. 3 d are mounted tocarrier 250. Carrier 250 is any carrier depicted in FIGS. 4 a-4 d oranother variation with enhanced warpage control. Carrier 250 is depictedwith base material 252 and metal film 254 deposited over base material252. Interface layer or tape 256 is bonded to metal film 254. Compositelayer 258 is bonded to the back surface of base material 252 to providesupport and improve warpage characteristics. Semiconductor die 124 aremounted to carrier 250 and interface layer 256 using, for example, apick and place operation with active surface 130 oriented toward thecarrier.

In FIG. 6 b, chase mold 260 is disposed over semiconductor die 124 andcarrier 250 to form chambers over semiconductor die 124 with opening 262between semiconductor die 124. FIG. 6 c shows an encapsulant or moldingcompound 264 deposited over and around semiconductor die 124 in chasemold 260 after the full closure of chase mold on interface layer 256.Encapsulant 264 is deposited over semiconductor die 124 using nozzledispense or paste printing followed by compressive molding or vacuummolding. In particular, encapsulant 264 covers the four side surfacesand back surface 128 of semiconductor die 124. Encapsulant 264 ispolymer composite material, such as epoxy resin with filler, epoxyacrylate with filler, or polymer with proper filler. Encapsulant 264 isnon-conductive and environmentally protects the semiconductor die fromexternal elements and contaminants. Encapsulant 264 also protectssemiconductor die 124 from degradation due to exposure to light. In oneembodiment, the thickness of encapsulant 264 over the back surface ofsemiconductor die 124 is 0.5 to 4 times the maximum filler cut of theencapsulant. The filler and CTE of encapsulant 264 are selected to aidwith gap filling, warpage control, and reliability.

In FIG. 6 d, a support layer or composite layer 266 is formed overencapsulant 264. Support layer 266 includes one or more laminated layersof prepreg with BT, FR-4, FR-1, CEM-1, or CEM-3, or other materialhaving similar insulating and structural properties. Support layer 266further includes an epoxy resin or polymer with a reinforcement fiber orfabric, such as phenolic cotton paper, epoxy, resin, woven glass, matteglass, polyester, and other reinforcement fibers or fabrics. In analternative embodiment, support layer 266 contains a molding compound,polymer dielectric with or without fillers, one or more layers of SiO2,Si3N4, SiON, Ta2O5, Al2O3, or other material having similar insulatingand structural properties. Support layer 266 is deposited using vacuumor pressure lamination with or without heat, PVD, CVD, screen printing,spin coating, spray coating, injection coating, sintering, thermaloxidation, or other suitable process. In one embodiment, support layer266 is a prepreg sheet, roll, or tape including a polymer matrixenhanced with woven glass fiber and deposited using vacuum or pressurelamination with or without heat. The material selected for support layer266 enhances the overall strength of the semiconductor package andimproves package warpage. The material for support layer 266 is selectedto tune the CTE of panel 267. In one embodiment, support layer 266 has aCTE less than 10 ppm and is less than 100 μm thick. An optional plasmaor solvent cleaning step is carried out on encapsulant 264 prior toformation of support layer 266 over encapsulant 264.

FIG. 6 e shows a cross section of panel 267 through encapsulant 264 andsupport layer 266. Panel 267 includes panel blocks 268. Each panel block268 includes one or more semiconductor die or component 124. Panelblocks 268 can also include one or more packages within each block 268.Panel blocks 268 are formed with gap or opening 262 between each panelblock. In FIGS. 6 e and 6 f, gap or opening 262 is filled withencapsulant 264 so that encapsulant 264 extends between adjacent panelblocks 268. The portion of encapsulant 264 in gap or opening 262 has aheight less than a height of the portion of encapsulant 264 over inpanel blocks 268. Panel 267 of FIG. 6 e includes four or more separatepanel blocks 268 with gap 262 between each panel block 268 filled withencapsulant 264.

In FIG. 6 f, an insulating or composite layer 276 is formed overencapsulant 274. Support layer 276 includes one or more laminated layersof prepreg with BT, FR-4, FR-1, CEM-1, or CEM-3, or other materialhaving similar structural properties. Support layer 276 further includesan epoxy resin or polymer with a reinforcement fiber or fabric, such asphenolic cotton paper, epoxy, resin, woven glass, matte glass,polyester, and other reinforcement fibers or fabrics. In an alternativeembodiment, support layer 276 contains a molding compound, polymerdielectric with or without fillers, one or more layers of SiO2, Si3N4,SiON, Ta2O5, Al2O3, or other material having similar insulating andstructural properties. Support layer 276 is deposited using vacuum orpressure lamination with or without heat, PVD, CVD, screen printing,spin coating, spray coating, injection coating, sintering, thermaloxidation, or other suitable process. In one embodiment, support layer276 is a prepreg sheet, roll, or tape including a polymer matrixenhanced with woven glass fiber and deposited using vacuum or pressurelamination with or without heat. The material selected for support layer276 enhances the overall strength of the semiconductor package andimproves package warpage. The material for support layer 276 is selectedto tune the CTE of panel 277. In one embodiment, support layer 276 has aCTE less than 10 ppm and is less than 100 μm thick. An optional plasmaor solvent cleaning step is carried out on encapsulant 274 prior toformation of support layer 276 over encapsulant 274.

FIG. 6 g shows panel 277 includes panel blocks 268. Each panel block 268includes one or more semiconductor die or component 124. Panel blocks268 can also include one or more packages within each block 268. Panelblocks 268 are formed with a gap or opening between each panel block.The gap or opening is filled with encapsulant 274 so that encapsulant274 extends between adjacent panel blocks 268 with the portion ofencapsulant 274 in the gap or opening thinner than the portion ofencapsulant 274 over in panel blocks 268. Panel 277 of FIG. 6 e includesat least nine separate panel blocks 268 with the opening between eachpanel block 268 filled with encapsulant 274. Panel 277 is formed withmore or fewer panel blocks as necessary.

In FIG. 6 h, carrier 250 including base material 252, interface layer256, and composite layer 254 are removed from panel 267 by chemicaletching, mechanical peeling, chemical mechanical planarization (CMP),mechanical grinding, thermal bake, UV light, laser scanning, or wetstripping. Debonded panel 267 has a tuned CTE by including selectedencapsulant 264, support layer 266, and thickness of die 124. Panel 267with a properly tuned CTE has robust mechanical support to undergofurther processing steps without a carrier.

An electrically conductive layer or RDL 282 is formed over the activesurface of semiconductor die 124, encapsulant 264, and support layer 266using a patterning and metal deposition process such as sputtering,electrolytic plating, or electroless plating. Conductive layer 282 isone or more layers of Al, Ti, TiW, Cu, Sn, Ni, Au, Ag, or other suitableelectrically conductive material. One portion of conductive layer 282 iselectrically connected to contact pads 132 of semiconductor die 124.Portions of conductive layer 282 are electrically common or electricallyisolated depending on the design and function of semiconductor die 124.

An insulating or passivation layer 284 is formed over the active surfaceof semiconductor die 124, encapsulant 264, support layer 266, andconductive layer 282 using PVD, CVD, printing, slit coating, spincoating, spray coating, injection coating, lamination, sintering, orthermal oxidation. Support layer 266 contains one or more layers ofSiO2, Si3N4, SiON, Ta2O5, Al2O3, polymer dielectric resist with orwithout fillers or fibers, or other material having similar structuraland insulating properties. In FIG. 6 h, opening 286 is formed byremoving a portion of insulating layer 284 using an exposure ordevelopment process, LDA, etching, or other suitable process to exposeconductive layer 282.

In FIG. 6 i, an electrically conductive bump material is deposited overthe build-up interconnect structure and electrically connected to theexposed portion of conductive layer 282 using an evaporation,electrolytic plating, electroless plating, ball drop, or screen printingprocess. The bump material is Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder,and combinations thereof, with an optional flux solution. For example,the bump material is eutectic Sn/Pb, high-lead solder, or lead-freesolder. The bump material is bonded to conductive layer 282 using asuitable attachment or bonding process. In one embodiment, the bumpmaterial is reflowed by heating the material above its melting point toform spherical balls or bumps 288. In some applications, bumps 288 arereflowed a second time to improve electrical contact to conductive layer282. An under bump metallization is formed under bumps 288. Bumps 288can also be compression bonded to conductive layer 282. Bumps 288represent one type of interconnect structure that is formed overconductive layer 282. The interconnect structure can also use stud bump,micro bump, or other electrical interconnect.

In FIG. 6 j, a backside surface of encapsulant 264 undergoes an optionalgrinding operation with grinder 292 to planarize and reduce a thicknessof support layer 266, encapsulant 264, and semiconductor die 124. Thegrinding operation removes a portion of encapsulant 264 and supportlayer 266. In one embodiment, encapsulant material is removed down toback surface 128 of semiconductor die 124. A chemical etch can also beused to planarize and remove a portion of encapsulant 264 andsemiconductor die 124. A chemical etch, CMP, or plasma dry etch can alsobe used to remove back grinding damage and residue stress onsemiconductor die 124 and encapsulant 264 to enhance the packagestrength. In one embodiment, encapsulant 264 and support layer 266remain over semiconductor die 124 after back grinding. After backgrinding, reconstituted wafer or panel 267 is singulated as shown inFIG. 6 k using a saw blade or laser cutting tool 294 to form individualsemiconductor packages 296. Semiconductor packages 296 are eWLB packagesor eWLCSP packages.

FIGS. 7 a-7 d illustrate a process of forming a semiconductor deviceusing a carrier and dual-layer support structure with enhanced warpagecontrol continuing from FIG. 6 f. In FIG. 7 a, carrier 250 includingbase material 252, interface layer 256, and composite layer 254 areremoved from panel 277 by chemical etching, mechanical peeling, chemicalmechanical planarization (CMP), mechanical grinding, thermal bake, UVlight, laser scanning, or wet stripping. Debonded panel 277 has a tunedCTE by including selected encapsulant 274, support material 276, andthickness of die 124. Panel 277 with a properly tuned CTE has robustmechanical support to undergo further processing steps without acarrier.

A semiconductor die 124 is disposed over a temporary substrate orcarrier 300, similar to carrier 250 in FIG. 6 a, with active surface 130of semiconductor die 124 oriented away from the carrier. Carrier 300includes a base material 302 such as polycrystal silicon, polymer,glass, or other suitable low-cost, rigid material for structuralsupport. Interface layer or double-sided tape 304, similar to interfacelayer 256 in FIG. 6 a, is formed over the carrier as a temporaryadhesive bonding film, etch-stop layer, or thermal release layer. In oneembodiment, base material 302 is glass, with the CTE of encapsulant 274,insulating layer 276, and glass 302 tuned to support panel 277 duringsubsequent processing steps with improved warpage control and reducedbreakage.

In FIG. 7 b, an electrically conductive layer or RDL 310 is formed overthe active surface of semiconductor die 124, encapsulant 274, andinsulating layer 276 using a patterning and metal deposition processsuch as sputtering, electrolytic plating, or electroless plating.Conductive layer 310 includes one or more layers of Al, Ti, TiW, Cu, Sn,Ni, Au, Ag, or other suitable electrically conductive material. Oneportion of conductive layer 310 is electrically connected to contactpads 132 of semiconductor die 124. Portions of conductive layer 310 areelectrically common or electrically isolated depending on the design andfunction of semiconductor die 124.

An insulating or passivation layer 312 is formed over the active surfaceof semiconductor die 124, encapsulant 274, insulating layer 276, andconductive layer 310 using PVD, CVD, printing, slit coating, spincoating, spray coating, injection coating, lamination, sintering, orthermal oxidation. Insulating layer 276 contains one or more layers ofSiO2, Si3N4, SiON, Ta2O5, Al2O3, polymer dielectric resist with orwithout fillers or fibers, or other material having similar structuraland insulating properties. An opening is formed by removing a portion ofinsulating layer 312 using an exposure or development process, LDA,etching, or other suitable process to expose conductive layer 310.

An electrically conductive bump material is deposited over the build-upinterconnect structure and electrically connected to the exposed portionof conductive layer 310 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial includes Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, andcombinations thereof, with an optional flux solution. For example, thebump material is eutectic Sn/Pb, high-lead solder, or lead-free solder.The bump material is bonded to conductive layer 310 using a suitableattachment or bonding process. In one embodiment, the bump material isreflowed by heating the material above its melting point to formspherical balls or bumps 314. In some applications, bumps 314 arereflowed a second time to improve electrical contact to conductive layer310. An under bump metallization is formed under bumps 314. Bumps 314can also be compression bonded to conductive layer 310. Bumps 314represent one type of interconnect structure that can be formed overconductive layer 310. The interconnect structure can also use stud bump,micro bump, or other electrical interconnect.

In FIG. 7 c, carrier 300 including base material 302 and interface layer304 are removed from panel 277 by chemical etching, mechanical peeling,chemical mechanical planarization (CMP), mechanical grinding, thermalbake, UV light, laser scanning, or wet stripping. Debonded panel 277 hasa tuned CTE by including selected encapsulant 274, insulating layer 276,and thickness of die 124.

A backside surface of encapsulant 274 undergoes a grinding operationwith grinder 320 to planarize and reduce a thickness of insulating layer276, encapsulant 274, and semiconductor die 124. The grinding operationremoves a portion of encapsulant 274 and insulating layer 276. In oneembodiment, encapsulant material is removed down to back surface 128 ofsemiconductor die 124. A chemical etch can also be used to planarize andremove a portion of encapsulant 274 and semiconductor die 124. Achemical etch, CMP, or plasma dry etch can also be used to remove backgrinding damage and residue stress on semiconductor die 124 andencapsulant 274 to enhance the package strength. In one embodiment,encapsulant 274 and insulating layer 276 remain over semiconductor die124 after back grinding. After back grinding, reconstituted wafer orpanel 277 is singulated as shown in FIG. 7 d using a saw blade or lasercutting tool 322 to form individual semiconductor packages 296.Semiconductor packages 324 are eWLB packages or eWLCSP packages.

FIGS. 8 a-8 g show a process of forming a semiconductor device using acarrier with enhanced warpage control. In FIG. 8 a, semiconductor die124 from FIG. 3 d are mounted to carrier 350. Carrier 350 is any carrierdepicted in FIGS. 4 a-4 d or another variation with enhanced warpagecontrol. Carrier 350 is depicted with base material 352 and metal film354 deposited over base material 352. Interface layer or tape 356 isbonded to metal film 354. Composite layer 358 is bonded to the backsurface of base material 352 to provide support and improve warpagecharacteristics.

Semiconductor die 124 are mounted to carrier 350 and interface layer 356using, for example, a pick and place operation with active surface 130oriented toward the carrier. Frame support bars or support members 360are mounted on or disposed over carrier 350 between semiconductor die124 of adjacent panel blocks 368 and around each panel block 368 using apick and place operation, for example. Support members 360 providestructural support and balance warpage. Support members 360 are madefrom material such as plastic with a high CTE or printed circuit boardbase material. In one embodiment, the CTE of support member 360 isgreater than the CTE of encapsulant 364, which is greater than or equalto the CTE of insulating layer 366. Support member 360 has a height lessthan or equal to the height of semiconductor die 124.

FIGS. 8 b and 8 c show an encapsulant or molding compound 364 depositedover and around semiconductor die 124 and support member 360.Encapsulant 364 is deposited using a paste printing, compressivemolding, transfer molding, liquid encapsulant molding, vacuumlamination, spin coating, or other suitable applicator. In particular,encapsulant 364 covers the four side surfaces and back surface 128 ofsemiconductor die 124 and support member 360. Encapsulant 364 is polymercomposite material, such as epoxy resin with filler, epoxy acrylate withfiller, or polymer with proper filler. Encapsulant 364 is non-conductiveand environmentally protects the semiconductor die from externalelements and contaminants. Encapsulant 364 also protects semiconductordie 124 from degradation due to exposure to light. In one embodiment,the thickness of encapsulant 364 over the back surface of semiconductordie 124 is 0.5 to 4 times the maximum filler cut of the encapsulant. Thefiller and CTE of encapsulant 364 are selected to aid with gap filling,warpage control, and reliability.

An insulating or composite layer 366 is formed over encapsulant 364.Insulating layer 366 includes one or more laminated layers of prepregwith BT, FR-4, FR-1, CEM-1, or CEM-3, or other material having similarinsulating and structural properties. Insulating layer 366 furtherincludes an epoxy resin or polymer with a reinforcement fiber or fabric,such as phenolic cotton paper, epoxy, resin, woven glass, matte glass,polyester, and other reinforcement fibers or fabrics. In an alternativeembodiment, insulating layer 366 contains a molding compound, polymerdielectric with or without fillers, one or more layers of SiO2, Si3N4,SiON, Ta2O5, Al2O3, or other material having similar insulating andstructural properties. Insulating layer 366 is deposited using vacuum orpressure lamination with or without heat, PVD, CVD, screen printing,spin coating, spray coating, injection coating, sintering, thermaloxidation, or other suitable process. In one embodiment, insulatinglayer 366 is a prepreg sheet, roll, or tape including a polymer matrixenhanced with woven glass fiber and deposited using vacuum or pressurelamination with or without heat. The material selected for insulatinglayer 366 enhances the overall strength of the semiconductor package andimproves package warpage. The material for insulating layer 366 isselected to tune the CTE of panel 367. In one embodiment, insulatinglayer 366 has a CTE less than 10 ppm and is less than 100 μm thick. Anoptional plasma or solvent cleaning step is carried out on encapsulant364 prior to formation of insulating layer 366 over encapsulant 364.

FIG. 8 d shows a cross section of panel 367 through encapsulant 364 andsupport members 360. Panel 367 includes panel blocks 368. Each panelblock 368 includes one or more semiconductor die or components 124 andsupport members 360 around or within the panel block. Panel blocks 368can also include one or more packages within each block 368. Panelblocks 368 are formed with a space or opening separating each panelblock. A support member 360 extends between panel blocks 368 within theopening. Support member 360 is a broken or closed rectangular, circular,or other shape when viewed from above and is shown as a brokenrectangular shape in FIG. 8 d.

In FIG. 8 e, carrier 350 including base material 352, interface layer356, and composite layer 358 are removed from panel 367 by chemicaletching, mechanical peeling, chemical mechanical planarization (CMP),mechanical grinding, thermal bake, UV light, laser scanning, or wetstripping. Debonded panel 367 has a tuned CTE by including selectedencapsulant 364, support material 366, support member 360, and thicknessof die 124. Panel 367 with a properly tuned CTE has robust mechanicalsupport to undergo further processing steps without a carrier.

An electrically conductive layer or RDL 370 is formed over the activesurface of semiconductor die 124, encapsulant 364, and insulating layer366 using a patterning and metal deposition process such as sputtering,electrolytic plating, or electroless plating. Conductive layer 370 isone or more layers of Al, Ti, TiW, Cu, Sn, Ni, Au, Ag, or other suitableelectrically conductive material. One portion of conductive layer 370 iselectrically connected to contact pads 132 of semiconductor die 124.Portions of conductive layer 370 are electrically common or electricallyisolated depending on the design and function of semiconductor die 124.

An insulating or passivation layer 372 is formed over the active surfaceof semiconductor die 124, encapsulant 364, insulating layer 366, andconductive layer 370 using PVD, CVD, printing, slit coating, spincoating, spray coating, injection coating, lamination, sintering, orthermal oxidation. The insulating layer 372 contains one or more layersof SiO2, Si3N4, SiON, Ta2O5, Al2O3, polymer dielectric resist with orwithout fillers or fibers, or other material having similar structuraland insulating properties. An opening is formed by removing a portion ofinsulating layer 372 using an exposure or development process, LDA,etching, or other suitable process to expose conductive layer 370.

An electrically conductive bump material is deposited over the build-upinterconnect structure and electrically connected to the exposed portionof conductive layer 370 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial is Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinationsthereof, with an optional flux solution. For example, the bump materialis eutectic Sn/Pb, high-lead solder, or lead-free solder. The bumpmaterial is bonded to conductive layer 198 using a suitable attachmentor bonding process. In one embodiment, the bump material is reflowed byheating the material above its melting point to form spherical balls orbumps 374. In some applications, bumps 374 are reflowed a second time toimprove electrical contact to conductive layer 370. An under bumpmetallization is formed under bumps 374. Bumps 374 can also becompression bonded to conductive layer 370. Bumps 374 represent one typeof interconnect structure that can be formed over conductive layer 370.The interconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

In FIG. 8 f, a backside surface of encapsulant 364 undergoes an optionalgrinding operation with grinder 380 to planarize and reduce a thicknessof insulating layer 366, encapsulant 364, and semiconductor die 124. Thegrinding operation removes a portion of encapsulant 364 and insulatinglayer 366. In one embodiment, encapsulant material is removed down toback surface 128 of semiconductor die 124. A chemical etch can also beused to planarize and remove a portion of encapsulant 364 andsemiconductor die 124. A chemical etch, CMP, or plasma dry etch can alsobe used to remove back grinding damage and residue stress onsemiconductor die 124 and encapsulant 364 to enhance the packagestrength. In one embodiment, encapsulant 364 and insulating layer 366remain over semiconductor die 124 after back grinding. After backgrinding, reconstituted wafer or panel 367 is singulated as shown inFIG. 8 g using a saw blade or laser cutting tool 382 to form individualsemiconductor packages 384. Semiconductor packages 384 are eWLB packagesor eWLCSP packages.

FIGS. 9 a-9 g show a process of forming a semiconductor device using acarrier and panel with enhanced warpage control. In FIG. 9 a,semiconductor die 124 from FIG. 3 d are mounted to carrier 400. Carrier400 is any carrier depicted in FIGS. 4 a-4 d or another variation withenhanced warpage control. Carrier 400 is depicted with base material 402and metal film 404 deposited over base material 402. Interface layer ortape 406 is bonded to metal film 404. Composite layer 408 is bonded tothe back surface of base material 402 to provide support and improvewarpage characteristics. Semiconductor die 124 are mounted to carrier400 and interface layer 406 using, for example, a pick and placeoperation with active surface 130 oriented toward the carrier.

FIG. 9 b shows an encapsulant or molding compound 410 deposited over andaround semiconductor die 124. Encapsulant 410 is deposited using a pasteprinting, compressive molding, transfer molding, liquid encapsulantmolding, vacuum lamination, spin coating, or other suitable applicator.In particular, encapsulant 410 covers the four side surfaces and backsurface 128 of semiconductor die 124. Encapsulant 410 is polymercomposite material, such as epoxy resin with filler, epoxy acrylate withfiller, or polymer with proper filler. Encapsulant 410 is non-conductiveand environmentally protects the semiconductor die from externalelements and contaminants. Encapsulant 410 also protects semiconductordie 124 from degradation due to exposure to light. In one embodiment,the thickness of encapsulant 410 over the back surface of semiconductordie 124 is 0.5 to 4 times the maximum filler cut of the encapsulant. Thefiller and CTE of encapsulant 410 are selected to aid with gap filling,warpage control, and reliability.

In FIG. 9 c, carrier 400 including base material 402, interface layer406, and composite layer 408 are removed from panel 411 by chemicaletching, mechanical peeling, chemical mechanical planarization (CMP),mechanical grinding, thermal bake, UV light, laser scanning, or wetstripping. Debonded panel 411 has a tuned CTE by including selectedencapsulant 410 and thickness of die 124. Panel 411 with a properlytuned CTE has robust mechanical support to undergo further processingsteps without a carrier. Panel 411 is placed over a second carrier 412with active surface 130 of semiconductor die 124 oriented away fromcarrier 412. Carrier 412 includes base material 414, composite layer orinsulating layer 416 formed over base material 414, and adhesive orinterface layer 418 formed over insulating layer 416. In one embodiment,base material 414 is glass and insulating layer 416 is prepreg. FIG. 9 dshows another embodiment including a second carrier configured to reducewarpage and breakage during processing. Panel 411 is placed over asecond carrier 422 with active surface 130 of semiconductor die 124oriented away from carrier 422. Carrier 422 includes base material 424,interface layer 426 formed over base material 424, and compositeinsulating layer 428 formed over base material 424 opposite interface426. In one embodiment, base material 414 is glass and composite layer428 is prepreg material.

In FIG. 9 e, an electrically conductive layer or RDL 430 is formed overthe active surface of semiconductor die 124, encapsulant 410, andinsulating layer 366 using a patterning and metal deposition processsuch as sputtering, electrolytic plating, or electroless plating.Conductive layer 430 is one or more layers of Al, Ti, TiW, Cu, Sn, Ni,Au, Ag, or other suitable electrically conductive material. One portionof conductive layer 430 is electrically connected to contact pads 132 ofsemiconductor die 124. Portions of conductive layer 430 are electricallycommon or electrically isolated depending on the design and function ofsemiconductor die 124.

An insulating or passivation layer 432 is formed over the active surfaceof semiconductor die 124, encapsulant 410, and conductive layer 430using PVD, CVD, printing, slit coating, spin coating, spray coating,injection coating, lamination, sintering, or thermal oxidation. Theinsulating layer 432 contains one or more layers of SiO2, Si3N4, SiON,Ta2O5, Al2O3, polymer dielectric resist with or without fillers orfibers, or other material having similar structural and insulatingproperties. An opening is formed by removing a portion of insulatinglayer 432 using an exposure or development process, LDA, etching, orother suitable process to expose conductive layer 430.

An electrically conductive bump material is deposited over the build-upinterconnect structure and electrically connected to the exposed portionof conductive layer 430 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial is Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinationsthereof, with an optional flux solution. For example, the bump materialis eutectic Sn/Pb, high-lead solder, or lead-free solder. The bumpmaterial is bonded to conductive layer 430 using a suitable attachmentor bonding process. In one embodiment, the bump material is reflowed byheating the material above its meltingpoint to form spherical balls orbumps 434. In some applications, bumps 434 are reflowed a second time toimprove electrical contact to conductive layer 430. An under bumpmetallization is formed under bumps 434. Bumps 434 can also becompression bonded to conductive layer 430. Bumps 434 represent one typeof interconnect structure that can be formed over conductive layer 430.The interconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

In FIG. 9 f, a backside surface of encapsulant 410 undergoes an optionalgrinding operation with grinder 418 to planarize and reduce a thicknessof insulating layer 366, encapsulant 410, and semiconductor die 124. Thegrinding operation removes a portion of encapsulant 410 and insulatinglayer 366. In one embodiment, encapsulant material is removed down toback surface 128 of semiconductor die 124. A chemical etch can also beused to planarize and remove a portion of encapsulant 410 andsemiconductor die 124. A chemical etch, CMP, or plasma dry etch can alsobe used to remove back grinding damage and residue stress onsemiconductor die 124 and encapsulant 410 to enhance the packagestrength. In one embodiment, encapsulant 410 and insulating layer 366remain over semiconductor die 124 after back grinding. After backgrinding, reconstituted wafer or panel 411 is singulated as shown inFIG. 9 g using a saw blade or laser cutting tool 420 to form individualsemiconductor packages 422. Semiconductor packages 422 are eWLB packagesor eWLCSP packages.

FIGS. 10 a-10 h show a process of forming a semiconductor device using acarrier with enhanced warpage control. In FIG. 10 a, semiconductor die124 from FIG. 3 d are mounted to carrier 440. Carrier 440 is any carrierdepicted in FIGS. 4 a-4 d or another variation with enhanced warpagecontrol. Carrier 440 is depicted with base material 442 and metal film444 deposited over base material 442. Interface layer or tape 446 isbonded to metal film 444. Composite layer 448 is bonded to the backsurface of base material 442 to provide support and improve warpagecharacteristics. Semiconductor die 124 are mounted to carrier 440 andinterface layer 446 using, for example, a pick and place operation withactive surface 130 oriented toward the carrier. The thickness ofsemiconductor die 124 is less than 500 μm.

In FIG. 10 b, chase mold or chamber 450 contains semiconductor die 124in opening 452 and an insulating or composite layer 454 is formed oversemiconductor die 124 within opening 452. Insulating layer 454 includesone or more laminated layers of prepreg with BT, FR-4, FR-1, CEM-1, orCEM-3, or other material having similar insulating and structuralproperties. Insulating layer 454 further includes an epoxy resin orpolymer with a reinforcement fiber or fabric, such as phenolic cottonpaper, epoxy, resin, woven glass, matte glass, polyester, and otherreinforcement fibers or fabrics. In an alternative embodiment,insulating layer 454 contains a molding compound, polymer dielectricwith or without fillers, one or more layers of SiO2, Si3N4, SiON, Ta2O5,Al2O3, or other material having similar insulating and structuralproperties. Insulating layer 454 is deposited using vacuum or pressurelamination with or without heat, PVD, CVD, screen printing, spincoating, spray coating, injection coating, sintering, thermal oxidation,or other suitable process. In one embodiment, insulating layer 454 is aprepreg sheet, roll, or tape including a polymer matrix enhanced withwoven glass fiber and deposited using vacuum or pressure lamination withor without heat. The material selected for insulating layer 454 enhancesthe overall strength of the semiconductor package and improves packagewarpage. The material for insulating layer 454 is selected to tune theCTE of panel 455. In one embodiment, insulating layer 454 has a CTE lessthan 10 ppm and is less than 100 μm thick.

FIG. 10 c shows a chase mold 456 used to deposit encapsulant or moldingcompound 460 over and around semiconductor die 124 and insulating layer454. Encapsulant 460 is deposited using a paste printing, compressivemolding, transfer molding, liquid encapsulant molding, vacuumlamination, spin coating, or other suitable applicator. Encapsulant 460is polymer composite material, such as epoxy resin with filler, epoxyacrylate with filler, or polymer with proper filler. Encapsulant 460 isnon-conductive and environmentally protects the semiconductor die fromexternal elements and contaminants. Encapsulant 460 also protectssemiconductor die 124 from degradation due to exposure to light. Theinterface between encapsulant 460 and insulating layer 454 is flat orinterlocking. The filler and CTE of encapsulant 460 are selected to aidwith gap filling, warpage control, and reliability.

FIGS. 10 d and 10 e show panel 455 with encapsulant 460 deposited overinsulating layer 454. In FIG. 10 d, Panel 455 includes panel blocks withone or more semiconductor die or component 124 in each panel block.Panel blocks can also include one or more packages within each panelblock. Panel blocks 216 are formed with gap 458 between adjacent panelblocks. In FIG. 10 d, gaps 458 are filled with insulating layer 454 andencapsulant 460 deposited over insulating layer 454 in a central regionof panel 455. Insulating layer 454 separates carrier 440 fromencapsulant 460. In FIG. 10 e, encapsulant 460 extends to a surface ofcarrier 440 around insulating layer 454 at ends of panel 455 to encloseinsulating layer 454 and semiconductor die 124.

In FIG. 10 f, carrier 440 including base material 442, metal film 444,and interface layer 446 are removed from panel 455 by chemical etching,mechanical peeling, chemical mechanical planarization (CMP), mechanicalgrinding, thermal bake, UV light, laser scanning, or wet stripping.Debonded panel 455 has a tuned CTE by including selected encapsulant460, insulating layer 454, and thickness of die 124. Panel 455 with aproperly tuned CTE has robust mechanical support to undergo furtherprocessing steps without a carrier. An electrically conductive layer orRDL 462 is formed over the active surface of semiconductor die 124,encapsulant 460, and insulating layer 454 using a patterning and metaldeposition process such as sputtering, electrolytic plating, orelectroless plating. Conductive layer 462 is one or more layers of Al,Ti, TiW, Cu, Sn, Ni, Au, Ag, or other suitable electrically conductivematerial. One portion of conductive layer 462 is electrically connectedto contact pads 132 of semiconductor die 124. Portions of conductivelayer 462 are electrically common or electrically isolated depending onthe design and function of semiconductor die 124.

An insulating or passivation layer 464 is formed over the active surfaceof semiconductor die 124, insulating layer 454, and conductive layer 462using PVD, CVD, printing, slit coating, spin coating, spray coating,injection coating, lamination, sintering, or thermal oxidation. Theinsulating layer 366 contains one or more layers of SiO2, Si3N4, SiON,Ta2O5, Al2O3, polymer dielectric resist with or without fillers orfibers, or other material having similar structural and insulatingproperties. An opening is formed by removing a portion of insulatinglayer 464 using an exposure or development process, LDA, etching, orother suitable process to expose conductive layer 462.

An electrically conductive bump material is deposited over the build-upinterconnect structure and electrically connected to the exposed portionof conductive layer 462 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial is Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinationsthereof, with an optional flux solution. For example, the bump materialis eutectic Sn/Pb, high-lead solder, or lead-free solder. The bumpmaterial is bonded to conductive layer 462 using a suitable attachmentor bonding process. In one embodiment, the bump material is reflowed byheating the material above its melting point to form spherical balls orbumps 466. In some applications, bumps 466 are reflowed a second time toimprove electrical contact to conductive layer 462. An under bumpmetallization is formed under bumps 466. Bumps 466 can also becompression bonded to conductive layer 462. Bumps 466 represent one typeof interconnect structure that can be formed over conductive layer 462.The interconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

In FIG. 10 g, a backside surface of encapsulant 460 undergoes anoptional grinding operation with grinder 470 to planarize and reduce athickness of insulating layer 454, encapsulant 460, and semiconductordie 124. The grinding operation removes a portion of encapsulant 460 andinsulating layer 366. In one embodiment, encapsulant material is removeddown to back surface 128 of semiconductor die 124. A chemical etch canalso be used to planarize and remove a portion of encapsulant 460 andsemiconductor die 124. A chemical etch, CMP, or plasma dry etch can alsobe used to remove back grinding damage and residue stress onsemiconductor die 124 and encapsulant 460 to enhance the packagestrength. In one embodiment, encapsulant 460 and insulating layer 454remain over semiconductor die 124 after back grinding. After backgrinding, reconstituted wafer or panel 455 is singulated as shown inFIG. 10 g using a saw blade or laser cutting tool 472 to form individualsemiconductor packages 474. Semiconductor packages 474 are eWLB packagesor eWLCSP packages.

FIGS. 11 a-11 e show a process of forming a semiconductor device using acarrier with enhanced warpage control. In FIG. 11 a, semiconductor die124 from FIG. 3 d are mounted to carrier 480. Carrier 480 is any carrierdepicted in FIGS. 4 a-4 d or another variation with enhanced warpagecontrol. Carrier 480 is depicted with base material 482 and metal film484 deposited over base material 482. Interface layer or tape 486 isbonded to metal film 484. Composite layer 448 is bonded to the backsurface of base material 482 to provide support and improve warpagecharacteristics. Semiconductor die 124 are mounted to carrier 480 andinterface layer 486 using, for example, a pick and place operation withactive surface 130 oriented toward the carrier.

FIG. 11 b shows a resin coated copper (RCC) film or laminate 490deposited over and around semiconductor die 124. RCC film 490 includesmetal foil 492 over RCC film 490. In one embodiment, RCC film includescopper foil 492. RCC film 490 is deposited using a paste printing,compressive molding, transfer molding, liquid encapsulant molding,vacuum lamination, spin coating, or other suitable applicator. Inparticular, RCC film 490 covers the four side surfaces and back surface128 of semiconductor die 124. RCC film 490 is polymer compositematerial, such as epoxy resin with filler, epoxy acrylate with filler,or polymer with proper filler. RCC film 490 is non-conductive andenvironmentally protects the semiconductor die from external elementsand contaminants. RCC film 490 also protects semiconductor die 124 fromdegradation due to exposure to light. The CTE of RCC film 490 isselected to aid with gap filling, warpage control, and reliability.

FIG. 11 c shows chase mold 498 with opening 500 over RCC film 490 andmetal foil 492 to deposit encapsulant or molding compound 502 oversemiconductor die 124 and RCC film 490. Encapsulant 502 is depositedusing a paste printing, compressive molding, transfer molding, liquidencapsulant molding, vacuum lamination, spin coating, or other suitableapplicator. Encapsulant 502 is polymer composite material, such as epoxyresin with filler, epoxy acrylate with filler, or polymer with properfiller. Encapsulant 502 is non-conductive and environmentally protectsthe semiconductor die from external elements and contaminants.Encapsulant 502 also protects semiconductor die 124 from degradation dueto exposure to light. In one embodiment, the thickness of encapsulant502 over the back surface of foil 492 is 0.75 to 1.5 times the maximumfiller cut of the encapsulant. The filler and CTE of encapsulant 502 areselected to aid with gap filling, warpage control, and reliability.

FIG. 11 d shows chase mold 498 removed from carrier 480 leavingencapsulated panel 503. Encapsulated panel 503 includes semiconductordie 124, RCC film 490, and metal foil 492 over carrier 480.

In FIG. 11 e, carrier 480 including base material 482, interface layer486, and metal film 484 are removed from panel 503 by chemical etching,mechanical peeling, chemical mechanical planarization (CMP), mechanicalgrinding, thermal bake, UV light, laser scanning, or wet stripping.Debonded panel 503 has a tuned CTE by including selected RCC film 490,encapsulant 502, and thickness of die 124. Panel 503 with a properlytuned CTE has robust mechanical support to undergo further processingsteps without a carrier.

FIG. 11 f shows an embodiment similar to that in FIG. 11 e. Encapsulant502 extends around RCC film 490 and metal foil 492 to carrier 480 toenclose panel 503. Encapsulant 502 is formed completely around panel503.

In FIG. 11 g, an electrically conductive layer or RDL 506 is formed overthe active surface of semiconductor die 124, RCC film 490, andencapsulant 502 using a patterning and metal deposition process such assputtering, electrolytic plating, or electroless plating. Conductivelayer 506 is one or more layers of Al, Ti, TiW, Cu, Sn, Ni, Au, Ag, orother suitable electrically conductive material. One portion ofconductive layer 506 is electrically connected to contact pads 132 ofsemiconductor die 124. Portions of conductive layer 506 are electricallycommon or electrically isolated depending on the design and function ofsemiconductor die 124.

An insulating or passivation layer 508 is formed over the active surfaceof semiconductor die 124, RCC film 490, and conductive layer 506 usingPVD, CVD, printing, slit coating, spin coating, spray coating, injectioncoating, lamination, sintering, or thermal oxidation. The insulatinglayer 508 contains one or more layers of SiO2, Si3N4, SiON, Ta2O5,Al2O3, polymer dielectric resist with or without fillers or fibers, orother material having similar structural and insulating properties. Anopening is formed by removing a portion of insulating layer 508 using anexposure or development process, LDA, etching, or other suitable processto expose conductive layer 506.

An electrically conductive bump material is deposited over the build-upinterconnect structure and electrically connected to the exposed portionof conductive layer 506 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial is Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinationsthereof, with an optional flux solution. For example, the bump materialis eutectic Sn/Pb, high-lead solder, or lead-free solder. The bumpmaterial is bonded to conductive layer 506 using a suitable attachmentor bonding process. In one embodiment, the bump material is reflowed byheating the material above its melting point to form spherical balls orbumps 510. In some applications, bumps 510 are reflowed a second time toimprove electrical contact to conductive layer 506. An under bumpmetallization is formed under bumps 510. Bumps 510 can also becompression bonded to conductive layer 506. Bumps 510 represent one typeof interconnect structure that can be formed over conductive layer 506.The interconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

FIGS. 12 a-12 e show a process of forming a semiconductor deviceincluding a glass support panel embedded in a fan-out substrate. In FIG.12 a, semiconductor die 124 from FIG. 3 d are mounted to carrier 520.Carrier 520 contains base material 522 such as polycrystal silicon,polymer, glass, or other suitable low-cost, rigid material forstructural support. An interface layer or double-sided tape 524 isformed over base material 522 as a temporary adhesive bonding film,etch-stop layer, or thermal release layer. In some embodiments, carrier520 also includes a fiber or filler enhanced composite layer forsupport. Semiconductor die 124 are mounted to carrier 520 and interfacelayer 524 using, for example, a pick and place operation with activesurface 130 oriented toward the carrier. Encapsulant or molding compound530 deposited on glass panel 528. Encapsulant 530 is deposited using apaste printing, compressive molding, transfer molding, liquidencapsulant molding, vacuum lamination, spin coating, or other suitableapplicator.

In FIG. 12 b, glass panel 528 is pressed into semiconductor die 124 andcarrier 520 with the encapsulant oriented towards carrier 520.Encapsulant 530 is polymer composite material, such as epoxy resin withfiller, epoxy acrylate with filler, or polymer with proper filler.Encapsulant 530 is non-conductive and environmentally protects thesemiconductor die from external elements and contaminants. Encapsulant530 also protects semiconductor die 124 from degradation due to exposureto light. The filler and CTE of encapsulant 530 are selected to aid withgap filling, warpage control, and reliability. The encapsulant isdeposited over and around semiconductor die 124 and over carrier 520,with glass panel 528 embedded in encapsulant 530. The glass panel issmaller than the fan-out substrate so that encapsulant 530 extends overside surfaces of embedded glass panel 528. In one embodiment, glasspanel 528 is at least 3 mm smaller than the fan-out substrate so that atleast 3 mm of encapsulant is disposed around glass substrate 528.

In FIG. 12 c, semiconductor die 124 from FIG. 3 d are mounted to carrier520. Carrier 520 contains base material 522 such as polycrystal silicon,polymer, glass, or other suitable low-cost, rigid material forstructural support. An interface layer or double-sided tape 524 isformed over base material 522 as a temporary adhesive bonding film,etch-stop layer, or thermal release layer. In some embodiments, carrier520 also includes a fiber or filler enhanced composite layer forsupport. Semiconductor die 124 are mounted to carrier 520 and interfacelayer 524 using, for example, a pick and place operation with activesurface 130 oriented toward the carrier. Encapsulant or molding compound530 is deposited over semiconductor die 124 and substrate 520.Encapsulant 530 is deposited using a paste printing, compressivemolding, transfer molding, liquid encapsulant molding, vacuumlamination, spin coating, or other suitable applicator.

FIG. 12 d shows glass panel 528 is pressed into semiconductor die 124and carrier 520 with the encapsulant 530 between glass panel and carrier520 to spread encapsulant 530 over semiconductor die 124. Encapsulant530 is polymer composite material, such as epoxy resin with filler,epoxy acrylate with filler, or polymer with proper filler. Encapsulant530 is non-conductive and environmentally protects the semiconductor diefrom external elements and contaminants. Encapsulant 530 also protectssemiconductor die 124 from degradation due to exposure to light. Thefiller and CTE of encapsulant 530 are selected to aid with gap filling,warpage control, and reliability. The encapsulant is deposited over andaround semiconductor die 124 and over carrier 520, with glass panel 528embedded in encapsulant 530. Glass panel 528 is smaller than the fan-outsubstrate so that encapsulant 530 extends over side surfaces of embeddedglass panel 528. In one embodiment, glass panel 528 is at least 3 mmsmaller than the fan-out substrate so that at least 3 mm of encapsulantis disposed around glass substrate 528.

In FIG. 12 e, carrier 520 including base material 522 and interfacelayer 524 are removed from panel 531 by chemical etching, mechanicalpeeling, chemical mechanical planarization (CMP), mechanical grinding,thermal bake, UV light, laser scanning, or wet stripping. Debonded panel531 has a tuned CTE by including selected encapsulant 530, glass 528,and thickness of die 124. Panel 531 with a properly tuned CTE has robustmechanical support to undergo further processing steps without acarrier.

In FIG. 12 f, an electrically conductive layer or RDL 430 is formed overthe active surface of semiconductor die 124 and encapsulant 530 using apatterning and metal deposition process such as sputtering, electrolyticplating, or electroless plating. Conductive layer 532 is one or morelayers of Al, Ti, TiW, Cu, Sn, Ni, Au, Ag, or other suitableelectrically conductive material. One portion of conductive layer 532 iselectrically connected to contact pads 132 of semiconductor die 124.Portions of conductive layer 532 are electrically common or electricallyisolated depending on the design and function of semiconductor die 124.

An insulating or passivation layer 536 is formed over the active surfaceof semiconductor die 124, encapsulant 530, and conductive layer 532using PVD, CVD, printing, slit coating, spin coating, spray coating,injection coating, lamination, sintering, or thermal oxidation. Theinsulating layer 536 contains one or more layers of SiO2, Si3N4, SiON,Ta2O5, Al2O3, polymer dielectric resist with or without fillers orfibers, or other material having similar structural and insulatingproperties. An opening is formed by removing a portion of insulatinglayer 536 using an exposure or development process, LDA, etching, orother suitable process to expose conductive layer 532.

An electrically conductive bump material is deposited over the build-upinterconnect structure and electrically connected to the exposed portionof conductive layer 532 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The bumpmaterial is Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinationsthereof, with an optional flux solution. For example, the bump materialis eutectic Sn/Pb, high-lead solder, or lead-free solder. The bumpmaterial is bonded to conductive layer 532 using a suitable attachmentor bonding process. In one embodiment, the bump material is reflowed byheating the material above its melting point to form spherical balls orbumps 538. In some applications, bumps 538 are reflowed a second time toimprove electrical contact to conductive layer 532. An under bumpmetallization is formed under bumps 538. Bumps 538 can also becompression bonded to conductive layer 532. Bumps 538 represent one typeof interconnect structure that is formed over conductive layer 532. Theinterconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

In FIG. 12 g, a backside surface of encapsulant 530 undergoes a grindingoperation with grinder 540 to planarize and reduce a thickness ofinsulating layer 366, encapsulant 530, and semiconductor die 124. Thegrinding operation removes a portion of encapsulant 530 and a portion ofglass panel 528. In one embodiment, encapsulant material and glass isremoved down to back surface 128 of semiconductor die 124. A chemicaletch can also be used to planarize and remove a portion of encapsulant530 and semiconductor die 124. A chemical etch, CMP, or plasma dry etchcan also be used to remove back grinding damage and residue stress onsemiconductor die 124 and encapsulant 530 to enhance the packagestrength. Encapsulant 530 and glass panel 528 remain over semiconductordie 124 after back grinding. Alternatively, in FIG. 12 h, glass panel528 is completely removed, exposing the back surface of semiconductordie 124 or exposing encapsulant 530 over back surface of semiconductordie 124. After back grinding, reconstituted wafer or panel 531 issingulated as shown in FIG. 12 i using a saw blade or laser cutting tool542 to form individual semiconductor packages 544. Alternatively, glass528 is debonded from panel 531 and reused. Semiconductor packages 544are eWLB packages or eWLCSP packages including fan-out or fan-ininterconnect structures.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to the embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

1-6. (canceled)
 7. A method of making a semiconductor device,comprising: providing a plurality of semiconductor die; depositing anencapsulant over the semiconductor die including a recess between thesemiconductor die; forming a support layer over the encapsulant andrecess to form a panel; and forming a conductive layer over the panel.8. The method of claim 7, further including forming an insulating layerover the conductive layer.
 9. The method of claim 7, further including:providing a carrier; and disposing the semiconductor die over thecarrier.
 10. The method of claim 9, wherein providing the carrierfurther includes: forming a glass layer; forming a composite layer overthe glass layer; and forming an interface layer over the glass layer.11. The method of claim 7, further including forming the recess in theencapsulant between a plurality of panel blocks.
 12. The method of claim11, further including disposing a plurality of support members aroundthe panel blocks.
 13. The method of claim 7, further including forming aplurality of interconnect structures over the conductive layer.
 14. Amethod of making a semiconductor device, comprising: providing aplurality of semiconductor die; depositing an encapsulant over thesemiconductor die; forming a first support layer over the encapsulant toform a panel; and forming a conductive layer over the panel.
 15. Themethod of claim 14, further including forming an insulating layer overthe conductive layer.
 16. The method of claim 14, further including:providing a carrier; and disposing the semiconductor die over thecarrier.
 17. The method of claim 16, wherein providing the carrierfurther includes: forming a glass layer; forming a second support layerover the glass layer; and forming an interface layer over the glasslayer.
 18. The method of claim 14, further including forming a recess inthe encapsulant between a plurality of panel blocks.
 19. The method ofclaim 18, further including depositing the support layer into therecess.
 20. The method of claim 14, further including forming aplurality of bumps over the conductive layer.
 21. A semiconductordevice, comprising: a plurality of semiconductor die; an encapsulantdeposited over the semiconductor die including a recess between thesemiconductor die; a support layer formed over the encapsulant andrecess; and a conductive layer formed over the semiconductor die andencapsulant.
 22. The semiconductor device of claim 21, further includinga plurality of support members disposed around the semiconductor die.23. The semiconductor device of claim 21, wherein the support layerincludes composite material.
 24. The semiconductor device of claim 21,wherein the support layer includes an RCC film.
 25. The semiconductordevice of claim 24, wherein the support layer includes a substrateembedded in the encapsulant.
 26. The semiconductor device of claim 21,further including an interconnect structure formed over the conductivelayer.
 27. A semiconductor device, comprising: a plurality ofsemiconductor die; an encapsulant deposited over the semiconductor die;a support layer formed over the encapsulant; and a conductive layerformed over the semiconductor die and encapsulant.
 28. The semiconductordevice of claim 27, wherein the encapsulant further includes a recessbetween the semiconductor die.
 29. The semiconductor device of claim 27,further including a plurality of support members disposed around thesemiconductor die.
 30. The semiconductor device of claim 27, wherein thesupport layer includes composite material.
 31. The semiconductor deviceof claim 27, wherein the support layer includes an RCC film.
 32. Thesemiconductor device of claim 31, wherein the support layer includes asubstrate embedded in the encapsulant.
 33. A semiconductor device,comprising: a plurality of semiconductor die; an encapsulant depositedover the semiconductor die; and a support layer formed over theencapsulant.
 34. The semiconductor device of claim 33, further includinga conductive layer formed over the semiconductor die and encapsulant.35. The semiconductor device of claim 34, further including aninterconnect structure formed over the conductive layer.
 36. Thesemiconductor device of claim 33, further including a plurality ofsupport members disposed around the semiconductor die.
 37. Thesemiconductor device of claim 33, wherein the support layer includescomposite material.
 38. The semiconductor device of claim 33, whereinthe support layer includes an RCC film.
 39. The semiconductor device ofclaim 38, wherein the support layer includes a substrate embedded in theencapsulant.